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DN2530N3-G

Power MOSFET, N Channel, 300 V, 175 mA, 12 ohm, TO-92, Through Hole

MICROCHIP DN2530N3-G

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Manufacturer:
MICROCHIP MICROCHIP
Manufacturer Part No:
DN2530N3-G
Order Code:
2450506
Technical Datasheet:
DN2530N3-G   Datasheet
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Product Overview

The DN2530N3-G is a N-channel depletion-mode vertical DMOS FET utilizes an advanced vertical diffusion metal oxide semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in metal-oxide semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS field-effect transistor (FET) is ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
  • Low ON-resistance
  • Free from secondary breakdown
  • Low input and output leakages

Applications

Power Management, Communications & Networking

Product Information

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:
N Channel

:
300V

:
175mA

:
12ohm

:
TO-92

:
Through Hole

:
0V

:
-

:
740mW

:
3Pins

:
150°C

:
-

:
-

:
-
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Technical Docs (2)

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