2N5195
Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 40 W, TO-126, Through Hole
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| Quantity | Price |
|---|---|
| 5+ | Rs.75.270 |
| 10+ | Rs.60.270 |
| 100+ | Rs.43.140 |
| 500+ | Rs.30.160 |
| 1000+ | Rs.21.540 |
| 5000+ | Rs.18.850 |
Product Information
Product Overview
The 2N5195 transistor is a silicon NPN power transistor with a maximum collector-emitter voltage of 80V and a maximum collector current of 15A. It has a high current gain of 20-50, making it suitable for a wide range of applications. The transistor is 100% avalanche tested and has an excellent safe operating area, ensuring reliable operation in demanding environments. The 2N5195 is also designed to withstand high surge currents, making it ideal for applications that require robust performance.
- High-performance power amplification
- Efficient switching
- Reliable operation in harsh environments
- Easy design and implementation
- High surge current capability
- Wide range of applications
- Meets or exceeds all applicable industry standards, including JEDEC, EIA, and ISO
- Compliant with RoHS and WEEE regulations
Applications
Audio, DC/DC Converters, Automotive Systems, Medical Electronics, Telecommunications, Aerospace, Computers & Computer Peripherals, LED Lighting
Technical Specifications
PNP
4A
TO-126
3Pins
20hFE
Multicomp Pro Bipolar PNP Transistors
MSL 1 - Unlimited
80V
40W
Through Hole
2MHz
150°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate