2N5679
Bipolar (BJT) Single Transistor, PNP, 100 V, 1 A, 1 W, TO-39, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | Rs.238.590 |
| 10+ | Rs.190.440 |
| 100+ | Rs.135.590 |
| 500+ | Rs.95.620 |
| 1000+ | Rs.68.310 |
| 5000+ | Rs.59.690 |
Product Information
Product Overview
The 2N5679 transistor is a silicon NPN transistor with a maximum collector-emitter voltage of 250V and a maximum collector current of 10A. It has a high current gain of 20-50, making it suitable for a wide range of applications. The transistor is 100% avalanche tested and has an excellent safe operating area, ensuring reliable operation in demanding environments. The 2N5679 is also designed to withstand high surge currents, making it ideal for applications that require robust performance.
- High-performance amplification
- Efficient switching
- Reliable operation in harsh environments
- Easy design and implementation
- High surge current capability
- Wide range of applications
- Meets or exceeds all applicable industry standards, including JEDEC, EIA, and ISO
- Compliant with RoHS and WEEE regulations
Applications
Audio, DC/DC Converters, Motor Speed Controls, Power Supplies, Industrial Automation, LED Lighting, Automotive Systems, Medical Electronics, Telecommunications, Computers & Computer Peripherals
Technical Specifications
PNP
1A
TO-39
3Pins
40hFE
Multicomp Pro Bipolar PNP Transistors
MSL 1 - Unlimited
100V
1W
Through Hole
30MHz
200°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate