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NGW60T65M3DFPQ
IGBT, 80 A, 1.45 V, 431 W, 650 V, TO-247, 3 Pins
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| Quantity | Price |
|---|---|
| 100+ | Rs.287.240 |
| 500+ | Rs.274.510 |
| 1000+ | Rs.269.020 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.28,724.00
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGW60T65M3DFPQ
Order Code4697661RL
Technical Datasheet
SVHCNo SVHC (25-Jun-2025)
Product Overview
NGW60T65M3DFPQ is a 650 V, 60A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5μs. This hard-switching 650V, 60A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and soft fast reverse recovery diode
- HV-H3TRB qualified
Technical Specifications
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001