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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC3535
Order Code2322579
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id2.1A
Drain Source On State Resistance0.147ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDC3535 is a P-channel MOSFET produced using advanced PowerTrench® process.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- Fast switching speed
- 100% UIL tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.1A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2022)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.147ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85423100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00005