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FDC6333C..
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.095 ohm
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| Quantity | Price |
|---|---|
| 100+ | Rs.32.020 |
| 500+ | Rs.22.170 |
| 1500+ | Rs.21.730 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Rs.3,202.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6333C..
Order Code1700671RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id2.5A
On Resistance Rds(on)0.095ohm
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.095ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.095ohm
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max1.8V
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with DC-to-DC converter, load switch and LCD display inverter applications.
- Low gate charge
- Small footprint
- Low profile
- High performance Trench technology for extremely low RDS (ON)
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.095ohm
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance N Channel
0.095ohm
Drain Source On State Resistance P Channel
0.095ohm
Gate Source Threshold Voltage Max
1.8V
Power Dissipation Pd
960mW
Power Dissipation P Channel
960mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
2.5A
Continuous Drain Current Id N Channel
2.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (1)
Alternatives for FDC6333C..
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002