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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP8880
Order Code1228334
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id54A
Drain Source On State Resistance0.0116ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for FDP8880
1 Product Found
Product Overview
The FDP8880 is a PowerTrench® N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast-switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handling capability
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
54A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
55W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0116ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002