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FDS8978
Dual MOSFET, N Channel, 30 V, 30 V, 7.5 A, 7.5 A, 0.014 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8978
Order Code2454160RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id7.5A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.014ohm
Continuous Drain Current Id N Channel7.5A
Continuous Drain Current Id P Channel7.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.014ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.014ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (10-Jun-2022)
Product Overview
The FDS8978 is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- ±20V Gate to source voltage
- 7.5A Continuous drain current
- 49A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
7.5A
On Resistance Rds(on)
0.014ohm
Continuous Drain Current Id P Channel
7.5A
Drain Source On State Resistance N Channel
0.014ohm
Drain Source On State Resistance P Channel
0.014ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
1.6W
Power Dissipation P Channel
1.6W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (10-Jun-2022)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
7.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000187