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100+ | Rs.42.140 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD243T4G
Order Code2533324
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Continuous Collector Current4A
Power Dissipation12.5W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency40MHz
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The MJD243T4G is a 4A NPN bipolar Power Transistor designed for low voltage, low power and high gain audio amplifier applications.
- High current-gain - bandwidth product (fT = 40MHz minimum @ IC = 100mA DC)
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive, Audio
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
4A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
15hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation
12.5W
Transistor Mounting
Surface Mount
Transition Frequency
40MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001101