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QSE113
Phototransistor, 880 nm, 25 °, 100 mW, 2 Pins, Radial Leaded
Image is for illustrative purposes only. Please refer to product description.
4,498 In Stock
4,000 more incoming. You can reserve stock now
4498 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.79.870 |
| 10+ | Rs.55.740 |
| 25+ | Rs.50.830 |
| 50+ | Rs.45.920 |
| 100+ | Rs.41.010 |
| 500+ | Rs.33.640 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.79.87
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The QSE113 is a NPN silicon infrared phototransistor encapsulated in black plastic sidelooker package.
- Daylight filter
- High sensitivity
- Blue dot marking on the top side
- Power dissipation of 100mW
- Operating temperature range from -40°C to 100°C
- Peak sensitivity of 880nm
Technical Specifications
Wavelength Typ
880nm
Power Consumption
100mW
Transistor Case Style
Radial Leaded
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Viewing Angle
25°
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85389000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000159