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FDS8928A..
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.025 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8928A..
Order Code1467988RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.5A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel5.5A
On Resistance Rds(on)0.025ohm
Continuous Drain Current Id P Channel5.5A
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max670mV
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Alternatives for FDS8928A..
2 Products Found
Product Overview
The FDS8928A is a dual N/P-channel enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
5.5A
Continuous Drain Current Id N Channel
5.5A
Continuous Drain Current Id P Channel
5.5A
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
670mV
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.025ohm
Transistor Mounting
Surface Mount
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000224