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FDS8958A-F085
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7 A, 7 A, 0.019 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8958A-F085
Order Code2453865RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id7A
On Resistance Rds(on)0.019ohm
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel7A
Drain Source On State Resistance N Channel0.019ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.019ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
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Product Overview
The FDS8958A_F085 is a dual N/P-channel MOSFET advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- High power and current handling capability in a widely used surface-mount package
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.019ohm
Continuous Drain Current Id P Channel
7A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.019ohm
Gate Source Threshold Voltage Max
1.9V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (17-Jan-2022)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
7A
Continuous Drain Current Id N Channel
7A
Drain Source On State Resistance N Channel
0.019ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454