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NTH4L013N120M3S
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 151 A, 1.2 kV, 0.02 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L013N120M3S
Order Code4472907
Product RangeEliteSiC Series
Technical Datasheet
494 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.2,637.340 |
| 5+ | Rs.2,376.580 |
| 10+ | Rs.2,115.820 |
| 50+ | Rs.2,073.510 |
| 100+ | Rs.2,031.190 |
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Multiple: 1
Rs.2,637.34
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L013N120M3S
Order Code4472907
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id151A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation682W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
151A
Drain Source On State Resistance
0.02ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
682W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001