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NTMD5838NLR2G
Dual MOSFET, N Channel, 40 V, 7.4 A, 0.02 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMD5838NLR2G
Order Code2533196RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id7.4A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.0162ohm
Continuous Drain Current Id N Channel7.4A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Transistor Case StyleNSOIC
No. of Pins8Pins
Power Dissipation Pd2.1W
Power Dissipation N Channel2.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
- Power, dual, N-channel MOSFET
- Drain-to-source voltage is 40V (TJ = 25°C)
- Gate threshold voltage is 1.8V (typ, VGS = VDS, ID = 250µA, TJ = 25°C)
- Forward transconductance is 4.0S (typ, VDS = 15V, ID = 7A, TJ = 25°C)
- Reverse transfer capacitance is 90pF (typ, VGS = 0V, f = 1MHz, VDS = 20V, TJ = 25°C)
- Gate resistance is 1.8ohm (typ, TJ = 25°C)
- Turn-on delay time is 11ns (typ, VGS = 4.5V, VDS = 20V, ID = 7A, RG = 2.5ohm, TJ = 25°C)
- Rise time is 23ns (typ, VGS = 4.5V, VDS = 20V, ID = 7A, RG = 2.5ohm, TJ = 25°C)
- Reverse recovery time is 17ns (typ, VGS = 0V, dIS/dt = 100A/s, IS = 7A, TJ = 25°C)
- SO-8 package, operating junction and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
7.4A
On Resistance Rds(on)
0.0162ohm
Continuous Drain Current Id P Channel
-
Rds(on) Test Voltage
10V
Transistor Case Style
NSOIC
Power Dissipation Pd
2.1W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
7.4A
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Associated Products
6 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001