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RH6E040BGTB1
Power MOSFET, N Channel, 30 V, 125 A, 0.0029 ohm, HSMT, Surface Mount
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80 In Stock
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| Quantity | Price |
|---|---|
| 100+ | Rs.89.840 |
| 500+ | Rs.76.530 |
| 1000+ | Rs.58.690 |
| 5000+ | Rs.55.730 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.8,984.00
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Product Information
ManufacturerROHM
Manufacturer Part NoRH6E040BGTB1
Order Code4410732RL
Technical Datasheet
Drain Source Voltage Vds30V
Continuous Drain Current Id125A
Drain Source On State Resistance0.0029ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation78W
No. of Pins8Pins
Operating Temperature Max150°C
Technical Specifications
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0029ohm
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Continuous Drain Current Id
125A
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000013