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SDP30S120
Silicon Carbide Schottky Diode, Single, 1.2 kV, 30 A, 13 nC, TO-247
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSEMISOUTH
Manufacturer Part NoSDP30S120
Order Code1903294
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current30A
Total Capacitive Charge13nC
Diode Case StyleTO-247
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCTo Be Advised
Product Overview
The SDP30S120 is a silicon carbide Power Schottky Diode features temperature independent switching behaviour, zero reverse recovery current and zero forward recovery voltage. It is used in solar inverter, SMPS, power factor correction, induction heating, UPS and motor drive applications.
- Positive temperature coefficient for ease of paralleling
- Temperature independent switching behaviour
- -55 to 175°C Operating and storage temperature range
Applications
Motor Drive & Control, Industrial
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
13nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
SVHC
To Be Advised
Diode Configuration
Single
Average Forward Current
30A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.008505