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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      IRF630

                      Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through Hole

                      STMICROELECTRONICS IRF630
                      STMICROELECTRONICS IRF630
                      STMICROELECTRONICS IRF630
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoIRF630
                      Order Code9802380
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      672 In Stock

                      Need more?

                      672 Delivery in 4-6 Business Days(UK stock)
                      QuantityPrice
                      1+Rs.143.910
                      10+Rs.66.080
                      100+Rs.64.040
                      500+Rs.54.460
                      1000+Rs.51.090
                      5000+Rs.50.070
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      Rs.143.91
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoIRF630
                      Order Code9802380
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Drain Source Voltage Vds200V
                      Continuous Drain Current Id9A
                      Drain Source On State Resistance0.4ohm
                      Transistor Case StyleTO-220
                      Transistor MountingThrough Hole
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max3V
                      Power Dissipation100W
                      No. of Pins3Pins
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      MSL-
                      SVHCLead (21-Jan-2025)

                      Product Overview

                      The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company’s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.

                      • Drain to source voltage (Vds) is 200V
                      • Gate to source voltage of ±20V
                      • Continuous drain current (Id) is 9A
                      • Power dissipation (Pd) is 75W
                      • Operating junction temperature range from -65°C to 150°C
                      • Gate threshold voltage of 3V
                      • Low on state resistance of 350mohm at Vgs 10V

                      Applications

                      Power Management, Consumer Electronics, Portable Devices, Industrial

                      Warnings

                      Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      9A

                      Transistor Case Style

                      TO-220

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      100W

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      Lead (21-Jan-2025)

                      Drain Source Voltage Vds

                      200V

                      Drain Source On State Resistance

                      0.4ohm

                      Transistor Mounting

                      Through Hole

                      Gate Source Threshold Voltage Max

                      3V

                      No. of Pins

                      3Pins

                      Product Range

                      -

                      MSL

                      -

                      Technical Docs (2)

                      Technical Data Sheet EN

                      Product Change Notice EN

                      Alternatives for IRF630

                      1 Product Found

                      Associated Products

                      4 Products Found

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      Morocco
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85389000
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Y-Ex

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:Lead (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.002931
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