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Quantity | Price |
---|---|
1+ | Rs.114.580 |
10+ | Rs.53.520 |
100+ | Rs.47.490 |
500+ | Rs.37.020 |
1000+ | Rs.30.810 |
5000+ | Rs.27.700 |
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Multiple: 1
Rs.114.58
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoTIP112
Order Code9803971
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd50W
DC Collector Current2A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE500hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications.
- Integrated anti-parallel collector-emitter diode
- PNP complementary type is TIP117
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
50W
RF Transistor Case
TO-220
DC Current Gain hFE
500hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
2A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002