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TSM2301CX
Power MOSFET, Low Voltage, P Channel, 20 V, 2.3 A, 0.095 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerTAIWAN SEMICONDUCTOR
Manufacturer Part NoTSM2301CX
Order Code1299315
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.095ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max450mV
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The TSM2301CX is a 20V P-channel enhancement mode Power MOSFET with high density cell design for ultra low on-resistance and excellent thermal and electrical capabilities.
- Advance trench process technology
- 100°C/W Junction-to-ambient thermal resistance
Applications
Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.095ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
450mV
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008