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CSD88599Q5DCT
Dual MOSFET, N Channel, 60 V, 60 V, 1700 µohm
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ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD88599Q5DCT
Order Code3009689
Product RangeNexFET Series
Your Part Number
No Longer Stocked
Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD88599Q5DCT
Order Code3009689
Product RangeNexFET Series
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel1700µohm
Drain Source On State Resistance P Channel1700µohm
Transistor Case StyleVSON
No. of Pins22Pins
Power Dissipation N Channel12W
Power Dissipation P Channel12W
Operating Temperature Max150°C
Product RangeNexFET Series
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
1700µohm
No. of Pins
22Pins
Power Dissipation P Channel
12W
Product Range
NexFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
1700µohm
Transistor Case Style
VSON
Power Dissipation N Channel
12W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0023