Print Page
2SK2607(F)
Power MOSFET, N Channel, 800 V, 9 A, 1.2 ohm, TO-3P, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part No2SK2607(F)
Order Code1218516
Also Known As2SK2607
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerTOSHIBA
Manufacturer Part No2SK2607(F)
Order Code1218516
Also Known As2SK2607
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id9A
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for 2SK2607(F)
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9A
Transistor Case Style
TO-3P
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006