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TPN2010FNH,L1Q(M
Power MOSFET, N Channel, 250 V, 9.9 A, 0.168 ohm, TSON, Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTPN2010FNH,L1Q(M
Order Code3870118
Also Known AsTPN2010FNH ,TPN2010FNH,L1Q
Technical Datasheet
2,271 In Stock
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2271 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 5+ | Rs.114.960 |
| 50+ | Rs.83.820 |
| 250+ | Rs.67.020 |
| 1000+ | Rs.57.020 |
| 3000+ | Rs.54.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
Rs.574.80
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN2010FNH,L1Q(M
Order Code3870118
Also Known AsTPN2010FNH ,TPN2010FNH,L1Q
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id9.9A
Drain Source On State Resistance0.168ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.9A
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.168ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001