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TPW2R508NH,L1Q(M
Power MOSFET, N Channel, 75 V, 170 A, 0.002 ohm, DSOP, Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTPW2R508NH,L1Q(M
Order Code4173250RL
Product RangeU-MOSVIII-H Series
Also Known AsTPW2R508NH, TPW2R508NH,L1Q
Technical Datasheet
4,000 In Stock
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4000 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | Rs.122.170 |
| 500+ | Rs.99.550 |
| 1000+ | Rs.97.650 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.12,217.00
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPW2R508NH,L1Q(M
Order Code4173250RL
Product RangeU-MOSVIII-H Series
Also Known AsTPW2R508NH, TPW2R508NH,L1Q
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id170A
Drain Source On State Resistance0.002ohm
Transistor Case StyleDSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation142W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeU-MOSVIII-H Series
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
170A
Transistor Case Style
DSOP
Rds(on) Test Voltage
10V
Power Dissipation
142W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
U-MOSVIII-H Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001