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BPW85B
Phototransistor, 850 nm, 25 °, 100 mW, 2 Pins, T-1 (3mm)
Image is for illustrative purposes only. Please refer to product description.
895 In Stock
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895 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.70.120 |
| 10+ | Rs.45.050 |
| 25+ | Rs.41.510 |
| 50+ | Rs.37.960 |
| 100+ | Rs.34.410 |
| 500+ | Rs.29.210 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.70.12
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
- Leaded silicon NPN phototransistor in clear, T-1 plastic package
- High photo sensitivity and high radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity: ϕ = ± 25°
- 4mA maximum collector light current at Ee = 1 mW/cm2, λ = 950nm, VCE = 5V
Technical Specifications
Wavelength Typ
850nm
Power Consumption
100mW
Transistor Case Style
T-1 (3mm)
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
25°
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000171