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IRLD110PBF
Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm, DIP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLD110PBF
Order Code1013423
Technical Datasheet
Channel TypeN Channel
Transistor Case StyleDIP
Transistor MountingThrough Hole
Product Range-
Qualification-
Alternatives for IRLD110PBF
1 Product Found
Product Overview
- N-channel power MOSFET in HVMDIP package
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- Logic-level gate drive
- 175°C operating temperature
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Transistor Mounting
Through Hole
Qualification
-
Transistor Case Style
DIP
Product Range
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85389000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000565