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SI1012X-T1-GE3
N CHANNEL MOSFET, 20V, 500mA, SC-89
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1012X-T1-GE3
Order Code1690182
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id600mA
Drain Source On State Resistance0.7ohm
Transistor Case StyleSC-89
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Gate Source Threshold Voltage Max900mV
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI1012X-T1-GE3
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
600mA
Transistor Case Style
SC-89
Rds(on) Test Voltage
6V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.7ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033