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Quantity | Price |
---|---|
5+ | Rs.51.400 |
10+ | Rs.35.300 |
100+ | Rs.25.910 |
500+ | Rs.21.210 |
1000+ | Rs.16.000 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
Rs.257.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1902DL-T1-E3
Order Code1470098
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id P Channel-
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI1902DL-T1-E3
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Product Overview
The SI1902DL-T1-E3 is a dual N-channel MOSFET intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250mA) need to be switched, either directly or by using a level shift configuration. It offers improved ON-resistance value and enhanced thermal performance.
- ±12V Gate to source voltage
- 1A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Transistor Case Style
SC-70
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000041