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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1958DH-T1-E3
Order Code1497604RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id1.3A
Continuous Drain Current Id N Channel1.3A
On Resistance Rds(on)0.165ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.6V
Power Dissipation Pd1.25W
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
1.3A
Continuous Drain Current Id P Channel
-
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.6V
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.3A
On Resistance Rds(on)
0.165ohm
Transistor Mounting
Surface Mount
Transistor Case Style
SOT-363
Power Dissipation Pd
1.25W
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000135