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SI7434DP-T1-GE3
N CHANNEL MOSFET, 250V, 3.8A, SOIC
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7434DP-T1-GE3
Order Code2132253
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id3.8A
Drain Source On State Resistance0.129ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Gate Source Threshold Voltage Max4V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.8A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
6V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.129ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000298