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SI7923DN-T1-GE3
Dual MOSFET, P Channel, 30 V, 30 V, 6.4 A, 6.4 A, 0.075 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI7923DN-T1-GE3
Order Code3126509
Product RangeTrenchFET Series
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7923DN-T1-GE3
Order Code3126509
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6.4A
Continuous Drain Current Id P Channel6.4A
Drain Source On State Resistance N Channel0.075ohm
Drain Source On State Resistance P Channel0.075ohm
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation N Channel1.3W
Power Dissipation P Channel1.3W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHC0
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Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6.4A
Drain Source On State Resistance P Channel
0.075ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.3W
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6.4A
Drain Source On State Resistance N Channel
0.075ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation N Channel
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
0
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000157