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SIZ342ADT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 33.4 A, 33.4 A, 0.0078 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ342ADT-T1-GE3
Order Code3365523RL
Product RangeTrenchFET GEN IV Series
Technical Datasheet
3,808 In Stock
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| Quantity | Price |
|---|---|
| 100+ | Rs.43.980 |
| 500+ | Rs.35.010 |
| 1000+ | Rs.32.700 |
| 5000+ | Rs.30.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.4,398.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ342ADT-T1-GE3
Order Code3365523RL
Product RangeTrenchFET GEN IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id33.4A
Continuous Drain Current Id N Channel33.4A
On Resistance Rds(on)0.0078ohm
Continuous Drain Current Id P Channel33.4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0078ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0078ohm
Gate Source Threshold Voltage Max2.4V
Transistor Case StylePowerPAIR
Power Dissipation Pd16.7W
No. of Pins8Pins
Power Dissipation N Channel16.7W
Power Dissipation P Channel16.7W
Operating Temperature Max150°C
Product RangeTrenchFET GEN IV Series
Qualification-
Automotive Qualification Standard-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
33.4A
Continuous Drain Current Id P Channel
33.4A
Drain Source On State Resistance N Channel
0.0078ohm
Drain Source On State Resistance P Channel
0.0078ohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation P Channel
16.7W
Product Range
TrenchFET GEN IV Series
Automotive Qualification Standard
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
33.4A
On Resistance Rds(on)
0.0078ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
16.7W
Power Dissipation N Channel
16.7W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001