Print Page
SIZ980BDT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ980BDT-T1-GE3
Order Code3368951RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
11,794 In Stock
Need more?
11794 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | Rs.75.610 |
| 500+ | Rs.62.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.7,561.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ980BDT-T1-GE3
Order Code3368951RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Channel TypeN Channel + Schottky
Transistor PolarityN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id197A
Continuous Drain Current Id N Channel197A
On Resistance Rds(on)817µohm
Continuous Drain Current Id P Channel197A
Drain Source On State Resistance N Channel817µohm
Drain Source On State Resistance P Channel817µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation Pd66W
Power Dissipation N Channel66W
Power Dissipation P Channel66W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV SkyFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel + Schottky
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
197A
Continuous Drain Current Id P Channel
197A
Drain Source On State Resistance P Channel
817µohm
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Power Dissipation N Channel
66W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
197A
On Resistance Rds(on)
817µohm
Drain Source On State Resistance N Channel
817µohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
Power Dissipation Pd
66W
Power Dissipation P Channel
66W
Product Range
TrenchFET Gen IV SkyFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001