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Product Overview
VEMT3700F-GS08 is a VEMT3700F high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950nm IR emitters. Application includes photo interrupters, miniature switches, counters, encoders, position sensors.
- Surface mount package type, high radiant sensitivity
- Fast response times, package notch indicates collector
- Wavelength of peak sensitivity is 940nm (typ, Tamb = 25°C)
- Daylight blocking filter matched with 870nm to 950nm emitters
- Collector emitter breakdown voltage is 70V (min, IC = 1mA)
- Rise time, fall time is 6μs (typ, VS = 5V, IC = 1mA, λ = 950nm, RL = 1Kohm)
- Cut-off frequency is 180KHz (typ, VS = 5V, IC = 2mA, RL = 100 ohm)
- Dimension (L x W x H) is 0.13inch x 0.11inch x 0.06inch
- Operating temperature range from -40 to + 100°C
Technical Specifications
Wavelength Typ
940nm
Power Consumption
100mW
Transistor Case Style
PLCC
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
120°
No. of Pins
2Pins
Product Range
-
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000095