C2M0080120D
Silicon Carbide MOSFET, Single, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | Rs.2,575.040 |
| 5+ | Rs.2,460.140 |
| 10+ | Rs.2,345.230 |
| 50+ | Rs.2,230.320 |
| 100+ | Rs.2,115.410 |
Product Information
Product Overview
The C2M0080120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
- Drain to source voltage (Vds) of 1.2kV
- Continuous drain current of 36A
- Power dissipation of 192W
- Operating junction temperature of -55°C to 150°C
- Low on state resistance of 80mohm at Vgs of 20V
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial, Motor Drive & Control, Alternative Energy
Technical Specifications
Single
31.6A
0.08ohm
3Pins
3.2V
150°C
-
N Channel
1.2kV
TO-247
20V
208W
-
No SVHC (17-Dec-2014)
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate