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ATF-54143-TR1G
RF FET Transistor, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerBROADCOM
Manufacturer Part NoATF-54143-TR1G
Order Code1056824
Technical Datasheet
Drain Source Voltage Vds5V
Continuous Drain Current Id120mA
Power Dissipation725mW
Transistor Case StyleSOT-343
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Product Overview
The ATF-54143-TR1G is a low noise enhancement mode Pseudomorphic HEMT in a surface mount plastic package. The combination of high gain, high linearity and low noise makes the HFET ideal for cellular/PCS base stations.
- Excellent uniformity in product specifications
- 800 Micron gate width
- Low noise figure
- High linearity performance
- Enhancement mode technology
Applications
RF Communications
Technical Specifications
Drain Source Voltage Vds
5V
Power Dissipation
725mW
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
120mA
Transistor Case Style
SOT-343
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85389000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00068