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DMG6602SVTQ-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm
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ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVTQ-7
Order Code3127320RL
Your Part Number
Technical Datasheet
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVTQ-7
Order Code3127320RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id3.4A
On Resistance Rds(on)0.038ohm
Continuous Drain Current Id N Channel3.4A
Continuous Drain Current Id P Channel3.4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.038ohm
Drain Source On State Resistance P Channel0.038ohm
Rds(on) Test Voltage10V
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max2.3V
Power Dissipation Pd840mW
No. of Pins6Pins
Power Dissipation N Channel840mW
Power Dissipation P Channel840mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.038ohm
Continuous Drain Current Id P Channel
3.4A
Drain Source On State Resistance N Channel
0.038ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.3V
No. of Pins
6Pins
Power Dissipation P Channel
840mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
3.4A
Continuous Drain Current Id N Channel
3.4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.038ohm
Transistor Case Style
TSOT-26
Power Dissipation Pd
840mW
Power Dissipation N Channel
840mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121