Print Page
DMN62D4LDW-13
Dual MOSFET, N Channel, 60 V, 60 V, 261 mA, 261 mA, 1.3 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 500+ | Rs.7.090 |
| 1000+ | Rs.5.560 |
| 5000+ | Rs.5.450 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
Rs.3,545.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN62D4LDW-13
Order Code3702795RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id261mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)1.3ohm
Continuous Drain Current Id N Channel261mA
Continuous Drain Current Id P Channel261mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.3ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel1.3ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2V
No. of Pins6Pins
Power Dissipation Pd450mW
Power Dissipation N Channel450mW
Power Dissipation P Channel450mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
261mA
On Resistance Rds(on)
1.3ohm
Continuous Drain Current Id P Channel
261mA
Drain Source On State Resistance N Channel
1.3ohm
Drain Source On State Resistance P Channel
1.3ohm
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
450mW
Power Dissipation P Channel
450mW
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
261mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
450mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008