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ZXMC3A17DN8TA
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.4 A, 4.4 A, 0.07 ohm
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168 In Stock
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168 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.135.040 |
| 10+ | Rs.85.190 |
| 50+ | Rs.71.010 |
| 100+ | Rs.56.830 |
| 250+ | Rs.55.700 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.135.04
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMC3A17DN8TA
Order Code1471154
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel4.4A
Continuous Drain Current Id P Channel4.4A
Drain Source On State Resistance N Channel0.07ohm
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZXMC3A17DN8TA is a N/P-channel complementary enhancement-mode MOSFET utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. It is ideal for high efficiency, low voltage and LCD backlighting applications.
- Low ON-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile
Applications
Industrial, Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
4.4A
Drain Source On State Resistance P Channel
0.07ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
4.4A
Drain Source On State Resistance N Channel
0.07ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00025