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ZXMC3A17DN8TA
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.4 A, 4.4 A, 0.07 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMC3A17DN8TA
Order Code1471154RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4.4A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.07ohm
Continuous Drain Current Id N Channel4.4A
Continuous Drain Current Id P Channel4.4A
Drain Source On State Resistance N Channel0.07ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.07ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
Power Dissipation Pd2.1W
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZXMC3A17DN8TA is a N/P-channel complementary enhancement-mode MOSFET utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. It is ideal for high efficiency, low voltage and LCD backlighting applications.
- Low ON-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile
Applications
Industrial, Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4.4A
On Resistance Rds(on)
0.07ohm
Continuous Drain Current Id P Channel
4.4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4.4A
Drain Source On State Resistance N Channel
0.07ohm
Drain Source On State Resistance P Channel
0.07ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
2.1W
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00025