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IMZA120R007M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 225 A, 1.2 kV, 7000 µohm, TO-247
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ManufacturerINFINEON
Manufacturer Part NoIMZA120R007M1HXKSA1
Order Code3958244
Product RangeCoolSiC Trench Series
Also Known AsSP005425973, IMZA120R007M1H
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | Rs.4,186.490 |
| 5+ | Rs.3,816.240 |
| 10+ | Rs.3,445.980 |
| 50+ | Rs.3,377.070 |
| 100+ | Rs.3,344.720 |
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Multiple: 1
Rs.4,186.49
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMZA120R007M1HXKSA1
Order Code3958244
Product RangeCoolSiC Trench Series
Also Known AsSP005425973, IMZA120R007M1H
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id225A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance7000µohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation750W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
IMZA120R007M1HXKSA1 is a CoolSiC™ 1200V SiC Trench MOSFET. Potential applications include general purpose drives (GPD), EV charging, online UPS/industrial UPS, string inverter, solar power optimizer.
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.2V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Drain-source voltage is 1200V at Tvj ≥ 25°C
- Drain-source on-state resistance is 7mohm typ at Tvj = 25°C, VGS(on) = 18V, ID = 108A
- PG-TO247-4-U02 package
- Storage temperature range from -55 to 150°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
225A
Drain Source On State Resistance
7000µohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
750W
Product Range
CoolSiC Trench Series
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.008081