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IPW60R045CPFKSA1

Name: Power MOSFET, N Channel, 650 V, 60 A, 0.045 ohm, TO-247, Through Hole
Brand: INFINEON
SKU: 1664083
Availability: InStock

Power MOSFET, N Channel, 650 V, 60 A, 0.045 ohm, TO-247, Through Hole

Image is for illustrative purposes only. Please refer to product description.

ManufacturerINFINEON

Manufacturer Part NoIPW60R045CPFKSA1

Order Code1664083

Also Known AsIPW60R045CP, SP000067149

Technical Datasheet

Data Sheet

See all Technical Docs

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Quantity	Price
1+	Rs.1,223.770
5+	Rs.1,151.130
10+	Rs.1,078.480
50+	Rs.991.480
100+	Rs.904.480
250+	Rs.886.400

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Product Information

ManufacturerINFINEON

Manufacturer Part NoIPW60R045CPFKSA1

Order Code1664083

Also Known AsIPW60R045CP, SP000067149

Technical Datasheet

Data Sheet

Channel TypeN Channel

Drain Source Voltage Vds650V

Continuous Drain Current Id60A

Drain Source On State Resistance0.045ohm

Transistor Case StyleTO-247

Transistor MountingThrough Hole

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max3V

Power Dissipation431W

No. of Pins3Pins

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 3 - 168 hours

SVHCNo SVHC (21-Jan-2025)

Product Overview

The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

Lowest Figure of Merit R on x Qg
Ultra low gate charge
Extreme dv/dt rated
Very fast switching
High current capability
Significant reduction of conduction and switching losses
High power density and efficiency for superior power conversion systems
Best-in-class performance ratio

Applications

Alternative Energy, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Power Management

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

60A

Transistor Case Style

TO-247

Rds(on) Test Voltage

10V

Power Dissipation

431W

Operating Temperature Max

150°C

Qualification

SVHC

No SVHC (21-Jan-2025)

Drain Source Voltage Vds

650V

Drain Source On State Resistance

0.045ohm

Transistor Mounting

Through Hole

Gate Source Threshold Voltage Max

No. of Pins

3Pins

Product Range

MSL

MSL 3 - 168 hours

Technical Docs (1)

Technical Data Sheet EN

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Associated Products

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Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out

Tariff No:85412900

US ECCN:EAR99

EU ECCN:NLR

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes