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Quantity | Price |
---|---|
1+ | Rs.163.280 |
10+ | Rs.124.400 |
50+ | Rs.109.080 |
100+ | Rs.100.300 |
250+ | Rs.99.540 |
Product Information
Product Overview
The IR2109SPBF is a high voltage high speed power MOSFET and IGBT Half-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3, 5 and 15V Logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High-side output in phase with IN input
- Lower di/dt gate driver for better noise immunity
- Shut down input turns OFF both channels
Applications
Industrial
Technical Specifications
2Channels
Half Bridge
8Pins
Surface Mount
200mA
10V
-40°C
750ns
-
MSL 2 - 1 year
-
MOSFET
SOIC
Non-Inverting
350mA
20V
125°C
200ns
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate