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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4BC30FPBF
Order Code9105000
Product RangeIRG4
Technical Datasheet
Continuous Collector Current31A
Collector Emitter Saturation Voltage1.9V
Power Dissipation100W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Product Overview
The IRG4BC30FPBF is an Insulated Gate Bipolar Transistor optimized for medium operating frequencies 1 to 5kHz in hard switching, <gt/>20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
- Optimized for specific application conditions
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Applications
HVAC, Consumer Electronics, Power Management
Technical Specifications
Continuous Collector Current
31A
Power Dissipation
100W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002