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Quantity | Price |
---|---|
1+ | Rs.476.680 |
10+ | Rs.312.250 |
25+ | Rs.269.620 |
50+ | Rs.245.700 |
100+ | Rs.221.770 |
250+ | Rs.197.810 |
Product Information
Product Overview
MPQ1923 is an AEC-Q100 qualified, 100V, 8A, high-frequency, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are controlled independently, and are matched with <lt/>5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET undervoltage lockout (UVLO) protection forces the outputs low. The MPQ1923 also features an integrated bootstrap (BST) diode to reduce the external component count. Applications include motor drivers, telecom half-bridge power supplies, avionics DC/DC converters, two-switch forward converters and active-clamp forward converters.
- Drives an N-channel MOSFET half-bridge
- Low dropout with 4.5V undervoltage lockout (UVLO) falling threshold
- 120V bootstrap voltage (VBST) range, on-chip bootstrap diode
- 20ns typical propagation delay, 8A sink current, 7A source current at 12V VDD
- <lt/>5ns gate driver matching time delay
- Drives a 1nF load with 7.2ns rise time (tRISE) and 5.5ns fall time (tFALL) at 12V VDD
- TTL-compatible input, <lt/>300µA quiescent current (IQ)
- UVLO protection for the HS-FET and LS-FET gate drivers
- Available in QFN-8 package
Notes
MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.
Technical Specifications
5V
8A
100V
8Pins
-
No SVHC (19-Jan-2021)
17V
-1V
QFN-EP
-
MPQ1923
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate