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FCP165N60E
Power MOSFET, N Channel, 600 V, 23 A, 0.132 ohm, TO-220, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFCP165N60E
Order Code2565218
Product RangeSuperFET II
Technical Datasheet
1,221 In Stock
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFCP165N60E
Order Code2565218
Product RangeSuperFET II
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id23A
Drain Source On State Resistance0.132ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperFET II
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
23A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.132ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
SuperFET II
MSL
-
Technical Docs (2)
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Associated Products
5 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001