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FDC6305N
Dual MOSFET, N Channel, 20 V, 2.7 A, 0.08 ohm
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| Quantity | Price |
|---|---|
| 100+ | Rs.36.950 |
| 500+ | Rs.29.160 |
| 1500+ | Rs.23.760 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.3,695.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6305N
Order Code9844805RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id2.7A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2.7A
On Resistance Rds(on)0.08ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.08ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6305N is a dual N-channel low threshold MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is suitable for use with load switch, DC-to-DC converters and motor driving applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Motor Drive & Control, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
2.7A
Continuous Drain Current Id N Channel
2.7A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.08ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
Power Dissipation Pd
960mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.08ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
900mV
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDC6305N
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000163