Print Page
FDC6318P
Dual MOSFET, P Channel, 12 V, 2.5 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6318P
Order Code
Re-Reel1611390RL
Cut Tape1611390
Your Part Number
6,939 In Stock
Need more?
6939 Delivery in 4-6 Business Days(UK stock)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Rs.62.400 |
| 10+ | Rs.58.360 |
| 100+ | Rs.40.000 |
| 500+ | Rs.32.020 |
| 1000+ | Rs.29.280 |
| 5000+ | Rs.28.350 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6318P
Order Code
Re-Reel1611390RL
Cut Tape1611390
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.09ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6318P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
- ±8V Gate to source voltage
- -2.5A Continuous drain/output current
- -7A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.09ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SuperSOT
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001