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Quantity | Price |
---|---|
1+ | Rs.475.820 |
10+ | Rs.267.890 |
100+ | Rs.215.690 |
500+ | Rs.206.670 |
1000+ | Rs.205.240 |
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Rs.475.82
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJW21195G
Order Code1700965
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max250V
Continuous Collector Current16A
Power Dissipation200W
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MJW21195G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
- Total harmonic distortion characterized
- High DC current gain
- Excellent gain linearity
- High SOA
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
16A
Transistor Case Style
TO-247
No. of Pins
3Pins
DC Current Gain hFE Min
20hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
250V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542