Print Page
FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
12,330 In Stock
Need more?
12330 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | Rs.35.060 |
| 500+ | Rs.25.030 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Rs.3,506.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6321C
Order Code9844848RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeN and P Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id460mA
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)0.33ohm
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel460mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.45ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max800mV
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
460mA
On Resistance Rds(on)
0.33ohm
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance N Channel
0.45ohm
Drain Source On State Resistance P Channel
1.1ohm
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
900mW
Power Dissipation P Channel
900mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
680mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDC6321C
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000113