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FDMQ8403
Dual MOSFET, Quad N Channel, 100 V, 6 A, 0.11 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDMQ8403
Order Code3003989RL
Product RangePowerTrench GreenBridge Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Rs.189.250 |
| 500+ | Rs.155.580 |
| 1500+ | Rs.148.620 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Rs.18,925.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMQ8403
Order Code3003989RL
Product RangePowerTrench GreenBridge Series
Technical Datasheet
Channel TypeQuad N Channel
Transistor PolarityQuad N Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id6A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel6A
On Resistance Rds(on)0.085ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.11ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Transistor Case StyleWDFN
No. of Pins12Pins
Power Dissipation Pd17W
Power Dissipation N Channel17W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangePowerTrench GreenBridge Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
FDMQ8403 is a MOSFET – N-Channel, POWERTRENCH®,Greenbridge™ series of high-efficiency bridge rectifier. This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Application includes high efficiency bridge rectifiers.
- 85mohm typical static drain to source on resistance (VGS = 10V, ID = 3A)
- Substantial efficiency benefit in PD solutions
- Gate to source voltage is ±20V, 1nA maximum zero gate voltage drain current (VGS = 0V, VDS = 80V)
- 2.8V typical drain to source breakdown voltage (VGS = VDS, ID = 250µA)
- 6S typical forward transconductance (VDS = 10V, ID = 3A)
- 4.1ns typical turn on delay time (VDD = 50V, ID = 3A, VGS = 10V, RGEN = 6ohm)
- 1.2ns typical rise time (VDD = 50V, ID = 3A, VGS = 10V, RGEN = 6ohm)
- 0.9nC typical gate to source charge (VDD = 50V, ID = 3A)
- 33ns typical reverse recovery time (IF = 3A, di/dt = 100 A/µs)
- WDFN12 package, operating and storage junction temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Quad N Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
6A
Continuous Drain Current Id N Channel
6A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.11ohm
Rds(on) Test Voltage
10V
Transistor Case Style
WDFN
Power Dissipation Pd
17W
Power Dissipation P Channel
-
Product Range
PowerTrench GreenBridge Series
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Quad N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.085ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2.8V
No. of Pins
12Pins
Power Dissipation N Channel
17W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005